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PD - 96277B
Features
IRF9204PbF
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
l Lead-Free
G
HEXFET ? Power MOSFET
D
V DSS = -40V
R DS(on) = 16m Ω
Description
S
I D = -74A
This HEXFET ? Power MOSFET utilizes advanced processing
techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
D
G
D
S
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and low
package cost of the TO-220 contribute to its wide acceptance
throughout the industry.
G
G a te
TO-220AB
IRF9204PbF
D
D r a in
S
S o u rce
Absolute Maximum Ratings
Parameter
Max.
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V (Silicon Limited)
-74
I D @ T C = 100°C
I D @ T C = 25°C
I DM
P D @T C = 25°C
V GS
E AS (Thermally limited)
E AS (Tested )
I AR
Continuous Drain Current, V GS @ 10V (Silicon Limited)
Continuous Drain Current, V GS @ 10V (Wire Bond Limited)
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
-53
-56
-300
143
0.95
± 20
270
502
See Fig.17a, 17b, 14, 15
A
W
W/°C
V
mJ
A
E AR
T J
T STG
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
-55 to + 175
300 (1.6mm from case )
10 lbf in (1.1N m)
mJ
°C
Thermal Resistance
Parameter
Typ.
Max.
Units
R θ JC
Junction-to-Case
–––
1.05
R θ CS
R θ JA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0.50
–––
–––
62
°C/W
www.irf.com
1
05/23/11
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